dated : 20/10/2005 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MMBTSC1621 npn silicon epitaxial planar switching transistor sot-23 plastic package absolute maximum ratings (t a = 25 o c) symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ces 40 v collector emitter voltage v ceo 15 v emitter base voltage v ebo 4.5 v collector current i c 500 ma power dissipation p tot 200 mw thermal resistance form junction to ambient in free air r thj-a 500 k/w junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
dated : 20/10/2005 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MMBTSC1621 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =1v, i c =10ma at v ce =1v, i c =10ma, ta= -55 o c at v ce =2v, i c =100ma h fe h fe h fe 40 20 20 - - - 120 - - - - - small signal current gain at v ce =10v, i c =1ma, f=100mhz h fe 5 - - - collector cutoff current at v cb =20v at v cb =20v, tj=125 o c i cbo - - - - 0.4 30 a ma collector saturation voltage at i c =10ma, i b =1ma v ce(sat) - - 0.25 v base saturation voltage at i c =10ma, i b =1ma v be(sat) 0.7 - 0.85 v collector emitter breakdown voltage at i c =10ma v (br)ceo 15 - - v collector emitter breakdown voltage at i c =10ma v (br)ces 40 - - v collector base breakdown voltage at i c =10ma v (br)cbo 40 - - v emitter base breakdown voltage at i e =10ma v (br)ebo 4.5 - - v output capacitance at v cb =5v, f=1mhz c ob - - 4 pf storage time at i con =i bon = -i boff =10ma t s - 5 13 ns turn-on time at i c =10ma, i bon =3ma, v cc =3v t on - 8 12 ns turn-off time at i c =10ma, i bon =3ma, i boff =1.5ma, v cc =3v t off - 10 18 ns
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